Yttrium oxide thin film deposition by atomic layer epitaxy (ALE) was studied at 200±425 C using Y(thd) 3 , Y(thd) 3 (bipyridyl), or Y(thd) 3 (1,10-phenanthroline) (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) as an yttrium precursor, and ozone as an oxygen source. All yttrium precursors were analyzed
Mass Analysis of Growth of Al2O3 Thin Films from Low-Temperature Atomic Layer Deposition on Woven Cotton
✍ Scribed by Daisuke Hojo; Tadafumi Adschiri
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 368 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0948-1907
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
Atomic layer deposition (ALD) at 100 °C provides a conformal coating on woven cotton with a tortuous and complex surfaces. The woven structures are completely preserved and replicated with thin coating of Al~2~O~3~, even after removing the cotton templates. The replicated woven structures enable direct mass analysis of the cotton coating. Quantitative analysis reveals that the self‐limiting reaction of ALD is ensured, even on tortuous cotton surfaces, except for early growth cycles. This unique feature of ALD assures conformal coating onto three‐dimensional (3D) networks of cotton. The results demonstrate the possibility of a non‐local methodology for evaluating the thickness of a coating on 3D objects at various stages of growth.
📜 SIMILAR VOLUMES