Atomic Layer Deposition of Epitaxial and Polycrystalline SnO2 Films from the SnI4/O2 Precursor Combination

✍ Scribed by J. Sundqvist; A. Tarre; A. Rosental; A. Hårsta

• Publisher: John Wiley and Sons
• Year: 2003
• Tongue: English
• Weight: 409 KB
• Volume: 9
• Category: Article
• ISSN: 0948-1907
• DOI: 10.1002/cvde.200290002

✦ Synopsis

Abstract

Thin films of SnO~2~ have been successfully deposited by atomic layer deposition (ALD) using the SnI~4~/O~2~ precursor combination. Depositions were carried out in the temperature range 400–750 °C on SiO~2~/Si(100) and single‐crystalline α‐Al~2~O~3~(012) substrates. The films were found to grow as the tetragonal SnO~2~ phase (cassiterite), polycrystalline on SiO~2~/Si(100), and epitaxial on the α‐Al~2~O~3~(012) substrates with the in‐plane orientation relationships [010] ∥ [100] and [10$\bar 1$] ∥ [$\bar 1$$\bar 2$1]. In general the growth rate was high, changing from 0.10 nm cycle^–1^ at 500 °C to 0.12 nm cycle^–1^ at 750 °C for the α‐Al~2~O~3~(012) substrates, and from 0.04 nm cycle^–1^ at 400 °C to 0.24 nm cycle^–1^ at 750 °C for the SiO~2~/Si(100) substrates.