## Abstract Thin films of SnO~2~ have been successfully deposited by atomic layer deposition (ALD) using the SnI~4~/O~2~ precursor combination. Depositions were carried out in the temperature range 400β750βΒ°C on SiO~2~/Si(100) and singleβcrystalline Ξ±βAl~2~O~3~(012) substrates. The films were found
β¦ LIBER β¦
CVD of Epitaxial SnO2 Films by the SnI4/O2 Precursor Combination.
β Scribed by Jonas Sundqvist; Mikael Ottosson; Anders Haarsta
- Publisher
- John Wiley and Sons
- Year
- 2004
- Weight
- 58 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0931-7597
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Atomic Layer Deposition of Epitaxial and
β
J. Sundqvist; A. Tarre; A. Rosental; A. HΓ₯rsta
π
Article
π
2003
π
John Wiley and Sons
π
English
β 409 KB
Synthesis of Al2O3βSiO2 Films by Ar/O2 P
β
Y. Li; S. Shimada; A. Hirose
π
Article
π
2006
π
John Wiley and Sons
π
English
β 445 KB
Atomic Layer Deposition of Co3O4 Thin Fi
β
M. Rooth; E. Lindahl; A. HΓ₯rsta
π
Article
π
2006
π
John Wiley and Sons
π
English
β 394 KB
Epitaxial Growth of Bi4Ti3O12 on Ξ±-Al2O3
β
M. Schuisky; R. Skoog; A. HΓ₯rsta
π
Article
π
2000
π
John Wiley and Sons
π
English
β 398 KB
gas was ultrahigh purity (UHP) argon. UHP oxygen, saturated with deionized H 2 O, served as the oxidant. The introduction of H 2 O was necessary to avoid the formation of BaF 2 as an impurity phase. Typical processing conditions for this study are summarized in Table . Table 1. Typical processing co
The Growth of Thermochromic VO2 Films on
β
Dimitra Vernardou; Martyn E. Pemble; David W. Sheel
π
Article
π
2006
π
John Wiley and Sons
β 10 KB
π 1 views
The deposition of aluminum nitride thin
The deposition of aluminum nitride thin films by metal-organic CVDβan alternative precursor system
β
Dr. Anthony C. Jones; John Auld; Simon A. Rushworth; Prof. Edward W. Williams; D
π
Article
π
1994
π
John Wiley and Sons
π
English
β 395 KB
π 1 views