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CVD of Epitaxial SnO2 Films by the SnI4/O2 Precursor Combination.

✍ Scribed by Jonas Sundqvist; Mikael Ottosson; Anders Haarsta


Publisher
John Wiley and Sons
Year
2004
Weight
58 KB
Volume
35
Category
Article
ISSN
0931-7597

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## Abstract Thin films of SnO~2~ have been successfully deposited by atomic layer deposition (ALD) using the SnI~4~/O~2~ precursor combination. Depositions were carried out in the temperature range 400–750 °C on SiO~2~/Si(100) and single‐crystalline α‐Al~2~O~3~(012) substrates. The films were found

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