Epitaxial Growth of Bi4Ti3O12 on α-Al2O3(012) Substrates by CVD Using Metal Chloride Precursors
✍ Scribed by M. Schuisky; R. Skoog; A. Hårsta
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 398 KB
- Volume
- 6
- Category
- Article
- ISSN
- 0948-1907
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✦ Synopsis
gas was ultrahigh purity (UHP) argon. UHP oxygen, saturated with deionized H 2 O, served as the oxidant. The introduction of H 2 O was necessary to avoid the formation of BaF 2 as an impurity phase. Typical processing conditions for this study are summarized in Table . Table 1. Typical processing conditions for the deposition of BaTiO 3 thin films using TPT, Ba(hfa) 2 ×PEB, water, and O 2 . Substrate MgO (100) Growth temperature [C] 700±800 Reactor pressure [torr] 4.0 Temperature of Ba(hfa) 2 ´PEB [C] 110 Temperature of TPT bubbler [C] 20 Temperature of water bubbler [C] 20 Oxygen flow rate [sccm] 50 Carrier gas flow rate [sccm] 70 Growth rate [nm hr ±1 ] 100
Single-crystal MgO (100) was used as the substrate for the BaTiO 3 growth. The as-polished MgO substrates were cleaned in boiling trichloroethylene, acetone, and methanol prior to the deposition. The substrate was supported on a SiC-coated graphite susceptor which was heated by an infrared lamp in the reaction zone. The deposition temperature was monitored using a chromel-alumel thermocouple. The BaTiO 3 film thickness was measured using a Metricon prism coupler apparatus.