## Abstract Thin films of tantalum oxide have been deposited on Si(100) substrates using atomic layer deposition (ALD) employing the TaI~5~ and O~2~ precursor combination. Growth was studied in the temperature region 400 to 700 °C. The resulting films were found to be iodine‐free above 450 °C, and
✦ LIBER ✦
The Atomic Layer Deposition of HfO2 and ZrO2 using Advanced Metallocene Precursors and H2O as the Oxygen Source
✍ Scribed by Charles L. Dezelah IV; Jaakko Niinistö; Kaupo Kukli; Frans Munnik; Jun Lu; Mikko Ritala; Markku Leskelä; Lauri Niinistö
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 385 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0948-1907
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