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Atomic Layer Deposition of Ta2O5 Using the TaI5 and O2 Precursor Combination

✍ Scribed by J. Sundqvist; H. Högberg; A. Hårsta

Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
231 KB
Volume
9
Category
Article
ISSN
0948-1907

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✦ Synopsis

Abstract

Thin films of tantalum oxide have been deposited on Si(100) substrates using atomic layer deposition (ALD) employing the TaI~5~ and O~2~ precursor combination. Growth was studied in the temperature region 400 to 700 °C. The resulting films were found to be iodine‐free above 450 °C, and consisted of the polycrystalline orthorhombic β‐Ta~2~O~5~ phase. The growth rate was found to be strongly dependent on the deposition temperature, reaching a maximum of 0.17 nm cycle^–1^ at 600 °C.

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Atomic Layer Deposition of Epitaxial and
Atomic Layer Deposition of Epitaxial and Polycrystalline SnO2 Films from the SnI4/O2 Precursor Combination
✍ J. Sundqvist; A. Tarre; A. Rosental; A. Hårsta 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 409 KB

## Abstract Thin films of SnO~2~ have been successfully deposited by atomic layer deposition (ALD) using the SnI~4~/O~2~ precursor combination. Depositions were carried out in the temperature range 400–750 °C on SiO~2~/Si(100) and single‐crystalline α‐Al~2~O~3~(012) substrates. The films were found