## Abstract Thin films of tantalum oxide have been deposited on Si(100) substrates using atomic layer deposition (ALD) employing the TaI~5~ and O~2~ precursor combination. Growth was studied in the temperature region 400 to 700 °C. The resulting films were found to be iodine‐free above 450 °C, and
✦ LIBER ✦
Atomic Layer Deposition of Ta2O5/Polyimide Nanolaminates
✍ Scribed by Leo D. Salmi; Esa Puukilainen; Marko Vehkamäki; Mikko Heikkilä; Mikko Ritala
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 389 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0948-1907
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