ChemInform Abstract: Chemical Vapor Deposition of MoS2 and TiS2 Films from the Metal- Organic Precursors Mo(S-tBu)4 and Ti(S-tBu)4.

✍ Scribed by J. CHEON; J. E. GOZUM; G. S. GIROLAMI

• Publisher: John Wiley and Sons
• Year: 2010
• Weight: 29 KB
• Volume: 28
• Category: Article
• ISSN: 0931-7597
• DOI: 10.1002/chin.199745022

✦ Synopsis

Chemical Vapor Deposition of MoS2 and TiS2 Films from the Metal-Organic Precursors Mo(S-tBu)4 and Ti(S-tBu)4. -The formation of thin MoS2 and TiS2 films by MOCVD from the title precursors is studied and the decomposition mechanism is described. Amorphous films with low levels of oxygen and carbon contaminants and with grain sizes ranging from 30 to 90 nm are deposited in the temp. range 200 to 350 • C. Isobutelene and tert-butylthiol are identified as major by-products formed during deposition. The distribution of organic by-products is explained by a three-step . beta.-hydrogen abstraction/proton transfer mechanism. The results are compared to those previously reported for films deposited from the Ti( S-tBu)4 precursor. -(CHEON, J.;