Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor

✍ Scribed by Hongtao Wang; Roy G. Gordon; Roger Alvis; Robert M. Ulfig

• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 846 KB
• Volume: 15
• Category: Article
• ISSN: 0948-1907
• DOI: 10.1002/cvde.200906789

✦ Synopsis

Abstract

Ruthenium thin films are deposited by atomic layer deposition (ALD) from bis(N,N'‐di‐tert‐butylacetamidinato)ruthenium(II) dicarbonyl and O~2~. Highly conductive, dense, and pure thin films can be deposited when oxygen exposure, E~O~, approaches a certain threshold (E~max~). When E~O~ > E~max~ the film peels off due to the recombinative desorption of O~2~ at the film/substrate interface. Analysis by atomic probe microscopy (APM) shows that the crystallites are nearly free from carbon impurity (<0.1 at.‐%), while a low level of carbon (<0.5 at.‐%) is segregated near the grain boundaries. APM also shows that a small amount of O impurity (0.3 at.‐%) is distributed uniformly between the crystallites and the grain boundaries.