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Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers

✍ Scribed by Peng, C. S.; Zhao, Z. Y.; Chen, H.; Li, J. H.; Li, Y. K.; Guo, L. W.; Dai, D. Y.; Huang, Q.; Zhou, J. M.; Zhang, Y. H.; Sheng, T. T.; Tung, C. H.

Book ID: 118231154
Publisher: American Institute of Physics
Year: 1998
Tongue: English
Weight: 585 KB
Volume: 72
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.121579

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