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Relaxed Si[sub 0.7]Ge[sub 0.3] layers grown on low-temperature Si buffers with low threading dislocation density

✍ Scribed by Li, J. H.; Peng, C. S.; Wu, Y.; Dai, D. Y.; Zhou, J. M.; Mai, Z. H.

Book ID: 121814611
Publisher: American Institute of Physics
Year: 1997
Tongue: English
Weight: 434 KB
Volume: 71
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.120268

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