✦ LIBER ✦

Promoting strain relaxation of Si0.72Ge0.28 film on Si (1 0 0) substrate by inserting a low-temperature Ge islands layer in UHVCVD

✍ Scribed by Zhiwen Zhou; Zhimeng Cai; Cheng Li; Hongkai Lai; Songyan Chen; Jinzhong Yu

Book ID: 108063721
Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 770 KB
Volume: 255
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2008.07.179

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Residual strain in Ge films grown by sur

Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(1 1 1) and Si(0 0 1) substrates

✍ Tobias F. Wietler; Eberhard Bugiel; Karl R. Hofmann 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 258 KB

Strain relaxation of epitaxial CoSi2 and

Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(0 0 1) and epi-CoSi2/Si0.83Ge0.17/Si(0 0 1) structures

✍ D.O. Shin; M.R. Sardela Jr.; S.H. Ban; N.-E. Lee; K.-H. Shim 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 324 KB

Quantum size effects in the low temperat

Quantum size effects in the low temperature layer-by-layer growth of Pb on Ge(0 0 1)

✍ L. Floreano; D. Cvetko; F. Bruno; G. Bavdek; A. Cossaro; R. Gotter; A. Verdini; 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 549 KB

The electronic properties of thin metallic films deviate from the corresponding bulk ones when the film thickness is comparable with the wavelength of the electrons at the Fermi level. This phenomenon, referred to as quantum size effect (QSE), is also expected to affect the film morphology and struc

XRD analysis of strained Ge–SiGe heteros

XRD analysis of strained Ge–SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

✍ N. Franco; N.P. Barradas; E. Alves; A.M. Vallêra; R.J.H. Morris; O.A. Mironov; E 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 201 KB

Self-limited growth of Si on B atomic-la

Self-limited growth of Si on B atomic-layer formed Ge(1 0 0) by ultraclean low-pressure CVD system

✍ Takashi Yokogawa; Kiyohisa Ishibashi; Masao Sakuraba; Junichi Murota; Yasuhiro I 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 409 KB

Heavy atomic-layer doping of B in low-te

Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition

✍ Hiroki Tanno; Masao Sakuraba; Bernd Tillack; Junichi Murota 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 448 KB

Promoting strain relaxation of Si0.72Ge0.28 film on Si (1&#xa0;0&#xa0;0) substrate by inserting a low-temperature Ge islands layer in UHVCVD

Promoting strain relaxation of Si0.72Ge0.28 film on Si (1 0 0) substrate by inserting a low-temperature Ge islands layer in UHVCVD