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XRD analysis of strained Ge–SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

✍ Scribed by N. Franco; N.P. Barradas; E. Alves; A.M. Vallêra; R.J.H. Morris; O.A. Mironov; E.H.C. Parker

Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 201 KB
Volume: 124-125
Category: Article
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2005.08.087

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XRD analysis of strained Ge–SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0&#xa0;0&#xa0;1) substrates

XRD analysis of strained Ge–SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates