GaN grown on Si(1 1 1) with st
โ
C.C. Huang; S.J. Chang; R.W. Chuang; J.C. Lin; Y.C. Cheng; W.J. Lin
๐
Article
๐
2010
๐
Elsevier Science
๐
English
โ 801 KB
The authors report the growth of crack-free GaN on Si(1 1 1) substrate with step-graded AlGaN intermediate layers all grown at 1120 โข C. By preparing all these layers at high-temperature, we can simplify the growth proceduce and minimize the growth time. Using X-ray diffraction and transmission elec