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GaN Schottky barrier photodiode on Si (1 1 1) with low-temperature-grown cap layer

โœ Scribed by L.S. Chuah; Z. Hassan; H. Abu Hassan; N.M. Ahmed


Book ID
116604881
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
454 KB
Volume
481
Category
Article
ISSN
0925-8388

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GaN grown on Si(1 1 1) with st
โœ C.C. Huang; S.J. Chang; R.W. Chuang; J.C. Lin; Y.C. Cheng; W.J. Lin ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 801 KB

The authors report the growth of crack-free GaN on Si(1 1 1) substrate with step-graded AlGaN intermediate layers all grown at 1120 โ€ข C. By preparing all these layers at high-temperature, we can simplify the growth proceduce and minimize the growth time. Using X-ray diffraction and transmission elec