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Wafer curvature analysis in 3C-SiC layers grown on (0 0 1) and (1 1 1) Si substrates

✍ Scribed by Matteo Bosi; Giovanni Attolini; Bernard E. Watts; Francesca Rossi; Claudio Ferrari; Ferenc Riesz; Liudi Jiang

Book ID: 108166178
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 256 KB
Volume: 318
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2010.10.042

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Wafer curvature analysis in 3C-SiC layers grown on (0&#xa0;0&#xa0;1) and (1&#xa0;1&#xa0;1) Si substrates

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