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Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)

โœ Scribed by Meng Wei; Xiaoliang Wang; Xu Pan; Hongling Xiao; CuiMei Wang; Qifeng Hou; Zhanguo Wang


Book ID
118486294
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
379 KB
Volume
14
Category
Article
ISSN
1369-8001

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๐Ÿ“œ SIMILAR VOLUMES


Growth of GaN film on Si (1 1 
โœ Xu Pan; Meng Wei; Cuibai Yang; Hongling Xiao; Cuimei Wang; Xiaoliang Wang ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 397 KB

A single high temperature AlN (HT-AlN) buffer has been used to relieve the stress in the growth of GaN epilayers on Si (1 1 1) substrates, but the growth of crack-free GaN on Si is still difficult due to the large mismatch of the lattice and coefficient of thermal-expansion (CTE) between GaN and Si.