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Investigation of {1 1 1}A and {1 1 1}B planes of c-GaN epilayers grown on GaAs(0 0 1) by MOCVD

โœ Scribed by X.H. Zheng; B. Qu; Y.T. Wang; Z.H. Feng; J.Y. Han; Hui Yang; J.W. Liang


Book ID
118532139
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
134 KB
Volume
233
Category
Article
ISSN
0022-0248

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ErP has been grown on InP (0 0 1), (1 1 1)A and (1 1 1)B substrates by low-pressure organometallic vapor-phase epitaxy. The morphological change with growth temperature has been explored by atomic force microscope. On all the substrates, ErP is grown in island structure. Height and area size of the