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Low-energy P+ ion channeling and implantation into Si(1 1 0), SiC(1 1 0), GaP(1 1 0) and GaAs(1 1 0)

✍ Scribed by A.M. Rasulov; A.A. Dzhurakhalov

Book ID: 116374406
Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 133 KB
Volume: 33
Category: Article
ISSN: 0927-0256
DOI: 10.1016/j.commatsci.2004.12.053

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Low-energy P+ ion channeling and implantation into Si(1&#xa0;1&#xa0;0), SiC(1&#xa0;1&#xa0;0), GaP(1&#xa0;1&#xa0;0) and GaAs(1&#xa0;1&#xa0;0)

Low-energy P+ ion channeling and implantation into Si(1 1 0), SiC(1 1 0), GaP(1 1 0) and GaAs(1 1 0)