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Electronic structure of GaN(0 0 0 1̄)-(1 × 1) surface

✍ Scribed by B.J. Kowalski; R.J. Iwanowski; J. Sadowski; I.A. Kowalik; J. Kanski; I. Grzegory; S. Porowski


Book ID
108278804
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
439 KB
Volume
548
Category
Article
ISSN
0039-6028

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Origins of GaN(0 0 0 1) s
✍ S Vézian; F Semond; J Massies; D.W Bullock; Z Ding; P.M Thibado 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 448 KB

The reconstructions of the Ga polarity GaN(0 0 0 1) surface with and without trace amounts of arsenic and prepared by molecular beam epitaxy (MBE) have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Various reconstructions are o