✦ LIBER ✦

Origins of GaN(0 0 0 1) surface reconstructions

✍ Scribed by S Vézian; F Semond; J Massies; D.W Bullock; Z Ding; P.M Thibado

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 448 KB
Volume: 541
Category: Article
ISSN: 0039-6028
DOI: 10.1016/s0039-6028(03)00950-6

No coin nor oath required. For personal study only.

✦ Synopsis

The reconstructions of the Ga polarity GaN(0 0 0 1) surface with and without trace amounts of arsenic and prepared by molecular beam epitaxy (MBE) have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Various reconstructions are observed with RHEED by analyzing patterns while the substrate is exposed to a fixed NH 3 flux or after depositing known amounts of Ga as a function of substrate temperature. In situ STM images reveal that only a few of these reconstructions yield long-range periodicity in real space. The controversial role of arsenic on Ga induced reconstructions was also investigated using two independent MBE chambers and X-ray photoelectron spectroscopy.

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Origins of GaN(0&#xa0;0&#xa0;0&#xa0;1) surface reconstructions

✦ Synopsis

Origins of GaN(0 0 0 1) surface reconstructions