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Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD

✍ Scribed by Weijun Luo; Xiaoliang Wang; Lunchun Guo; Hongling Xiao; Cuimei Wang; Junxue Ran; Jianping Li; Jinmin Li

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 253 KB
Volume: 39
Category: Article
ISSN: 0026-2692
DOI: 10.1016/j.mejo.2008.01.042

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