๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

The growth morphologies of GaN layer on Si(1 1 1) substrate

โœ Scribed by Yuan Lu; Xianglin Liu; Da-Cheng Lu; Hairong Yuan; Guiqing Hu; Xiaohui Wang; Zhanguo Wang; Xiaofeng Duan


Book ID
108341775
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
314 KB
Volume
247
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Growth of GaN film on Si (1 1 
โœ Xu Pan; Meng Wei; Cuibai Yang; Hongling Xiao; Cuimei Wang; Xiaoliang Wang ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 397 KB

A single high temperature AlN (HT-AlN) buffer has been used to relieve the stress in the growth of GaN epilayers on Si (1 1 1) substrates, but the growth of crack-free GaN on Si is still difficult due to the large mismatch of the lattice and coefficient of thermal-expansion (CTE) between GaN and Si.