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Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy

✍ Scribed by Xie, M. H.; Zheng, L. X.; Cheung, S. H.; Ng, Y. F.; Wu, Huasheng; Tong, S. Y.; Ohtani, N.

Book ID: 121752921
Publisher: American Institute of Physics
Year: 2000
Tongue: English
Weight: 377 KB
Volume: 77
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1289266

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