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Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy

✍ Scribed by Huang, D.; Reshchikov, M. A.; Yun, F.; King, T.; Baski, A. A.; Morkoç, H.

Book ID: 126788207
Publisher: American Institute of Physics
Year: 2002
Tongue: English
Weight: 522 KB
Volume: 80
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1432445

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