Recent developments in Ultra thin oxynitride gate dielectrics
β Scribed by L.K. Han; M. Bhat; D. Wristers; H.H. Wang; D.L. Kwong
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 608 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
We have demonstrated top-gate polymer field-effect transistors (FETs) with ultra-thin (30-50 nm), room-temperature crosslinkable polymer gate dielectrics based on blending an insulating base polymer such as poly(methyl methacrylate) with an organosilane crosslinking agent, 1,6-bis(trichlorosilyl)hex
We have investigated the dynamics of intrinsic dielectric breakdown (BD) in SiO thin films of thickness in the range 2 from 35 to 3 nm. BD is obtained under constant voltage Fowler-Nordheim stress at fields between 10 and 12.5 MV/ cm. As a function of oxide thickness we have followed with high time