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Intrinsic dielectric breakdown of ultra-thin gate oxides

✍ Scribed by S. Lombardo

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
355 KB
Volume
59
Category
Article
ISSN
0167-9317

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✦ Synopsis

We have investigated the dynamics of intrinsic dielectric breakdown (BD) in SiO thin films of thickness in the range 2 from 35 to 3 nm. BD is obtained under constant voltage Fowler-Nordheim stress at fields between 10 and 12.5 MV/ cm. As a function of oxide thickness we have followed with high time resolution the dynamics of the BD transient and analysed the post-BD damage by using transmission electron microscopy, photon emission microscopy and measurements of the post-BD current-voltage (I-V ) characteristics. Moreover, the effect of the density of electrons at the cathode on the resulting BD damage is put in evidence. The data are interpreted and discussed in the framework of a model.

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