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Modeling the breakdown and breakdown statistics of ultra-thin SiO2 gate oxides

✍ Scribed by Jordi Suñé; Ernest Wu

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
101 KB
Volume
59
Category
Article
ISSN
0167-9317

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✦ Synopsis

A complete picture of breakdown is presented and compared with a full set of experiments. First, an analytical model for the breakdown statistics is proposed. This model is shown to have essentially the same predictive power as the percolation approach. Second, a hydrogen-based quantitative picture for the defect generation process is presented. A two-step mechanism consisting in the release of protons from suboxide bonds at the anode interface and the subsequent reaction with oxygen vacancies is considered. A kinetic approach is followed to demonstrate the requirement of a parallel combination of the rates corresponding to these two processes. The model is successfully compared with a complete set of breakdown measurements.

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