𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Impact of conductivity and size of the breakdown spot on the progressive-breakdown of thin SiO2 gate oxides

✍ Scribed by M. Porti; M. Nafrı́a; X. Aymerich

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
202 KB
Volume
72
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Modeling the breakdown and breakdown sta
Modeling the breakdown and breakdown statistics of ultra-thin SiO2 gate oxides
✍ Jordi Suñé; Ernest Wu 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 101 KB

A complete picture of breakdown is presented and compared with a full set of experiments. First, an analytical model for the breakdown statistics is proposed. This model is shown to have essentially the same predictive power as the percolation approach. Second, a hydrogen-based quantitative picture

Transients during pre-breakdown and hard
Transients during pre-breakdown and hard breakdown of thin gate oxides in metal–SiO2–Si capacitors
✍ S Lombardo; F Crupi; C Spinella; B Neri 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 939 KB

Time±resolved electrical measurements show transient phenomena occurring during degradation and intrinsic dielectric breakdown of gate oxide layers under constant voltage Fowler±Nordheim stress. We have studied such transients in metal/oxide/semiconductor (MOS) capacitors with an n + poly-crystallin

Propagation of the SiO2 breakdown event
Propagation of the SiO2 breakdown event on MOS structures observed with conductive atomic force microscopy
✍ M Porti; M Nafrı́a; X Aymerich; A Olbrich; B Ebersberger 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 484 KB

In this work, for the first time, a conductive atomic force microscope has been used to electrically characterize the degradation and breakdown propagation of stressed ultra-thin ( , 6 nm) SiO films at a nanometric scale. The results show 2 that, although a slight lateral propagation of the degradat