Propagation of the SiO2 breakdown event on MOS structures observed with conductive atomic force microscopy
✍ Scribed by M Porti; M Nafrı́a; X Aymerich; A Olbrich; B Ebersberger
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 484 KB
- Volume
- 59
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
In this work, for the first time, a conductive atomic force microscope has been used to electrically characterize the degradation and breakdown propagation of stressed ultra-thin ( , 6 nm) SiO films at a nanometric scale. The results show 2 that, although a slight lateral propagation of the degradation is observed before breakdown, the affected area (few hundreds 2 of nm ) remains relatively constant. However, breakdown is laterally propagated to neighbor spots, although only in some 2 occasions morphological changes are observed. The breakdown affected area (several thousands of nm ) has been found to be strongly related to the hardness of the breakdown event.
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