SiON and SiO2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum

✍ Scribed by P. Delcroix; S. Blonkowski; M. Kogelschatz; M. Rafik; O. Gourhant; D. JeanJean; R. Beneyton; D. Roy; X. Federspiel; F. Martin; X. Garros; H. Grampeix; R. Gassilloud

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 573 KB
• Volume: 88
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2011.03.058