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Depth profiling of ultra-thin oxynitride gate dielectrics by using MCs2+ technique

✍ Scribed by D. Gui; Z.Q. Mo; Z.X. Xing; Y.H. Huang; Y.N. Hua; S.P. Zhao; L.Z. Cha


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
326 KB
Volume
255
Category
Article
ISSN
0169-4332

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