๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Reliability and integration of ultra-thin gate dielectrics for advanced CMOS

โœ Scribed by D.A. Buchanan; S.-H. Lo

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
621 KB
Volume
36
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

A novel approach for determining the eff
A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices
โœ C.L Hinkle; C Fulton; R.J Nemanich; G Lucovsky ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 224 KB

There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth ox