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Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide

✍ Scribed by A. Acovic; C.C.-H. Hsu; L.C. Hsia; J.M. Aitken


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
334 KB
Volume
36
Category
Article
ISSN
0038-1101

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