A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices
✍ Scribed by C.L Hinkle; C Fulton; R.J Nemanich; G Lucovsky
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 224 KB
- Volume
- 72
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect to Si, E B , and the effective electron tunneling mass, m eff , which mitigate gains from increased thickness. A novel technique, based on stacked dielectrics, is used to obtain the tunneling mass-conduction band offset energy product. When combined with optical measurements of tunneling barriers, this yields direct estimates of the tunneling mass.