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Comparison of ultra-thin gate dielectrics for 0.1 μm MOS devices

✍ Scribed by F. Bénistant; F. Mondon; F. Martin; G. Guégan

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 328 KB
Volume: 28
Category: Article
ISSN: 0167-9317
DOI: 10.1016/0167-9317(95)00025-4

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