Integration of HfxTayN metal gate with SiO2 and HfOxNy gate dielectrics for MOS device applications

✍ Scribed by Chang-Ta Yang; Kuei-Shu Chang-Liao; Hsin-Chun Chang; B.S. Sahu; Tzu-Chen Wang; Tien-Ko Wang; Wen-Fa Wu

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 647 KB
• Volume: 84
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2007.03.003