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Characteristics of metal-oxide-semiconductor (MOS) device with Er metal gate on SiO2 film

✍ Scribed by Chel-Jong Choi; Ha-Yong Yang; Hyo-Bong Hong; Jin-Gyu Kim; Sung-Yong Chang; Jouhahn Lee

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
358 KB
Volume
49
Category
Article
ISSN
0026-2714

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