✦ LIBER ✦
Thermal annealing effect on electrical properties of metal nitride gate electrodes with hafnium oxide gate dielectrics in nano-metric MOS devices
✍ Scribed by S. Chatterjee; Y. Kuo; J. Lu
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 631 KB
- Volume
- 85
- Category
- Article
- ISSN
- 0167-9317
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