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Comparison on the effects of defects at Si(111) and Si(100) surface on electrical characteristics of MOS devices with HfOxNy gate dielectric

โœ Scribed by Chin-Lung Cheng; Kuei-Shu Chang-Liao; Tien-Ko Wang

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
341 KB
Volume
80
Category
Article
ISSN
0167-9317

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