Ultra-thin polymer gate dielectrics for top-gate polymer field-effect transistors

✍ Scribed by Yong-Young Noh; Henning Sirringhaus

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 877 KB
• Volume: 10
• Category: Article
• ISSN: 1566-1199
• DOI: 10.1016/j.orgel.2008.10.021

✦ Synopsis

We have demonstrated top-gate polymer field-effect transistors (FETs) with ultra-thin (30-50 nm), room-temperature crosslinkable polymer gate dielectrics based on blending an insulating base polymer such as poly(methyl methacrylate) with an organosilane crosslinking agent, 1,6-bis(trichlorosilyl)hexane. The top-gate polymer transistors with thin gate dielectrics were operated at gate voltages less than À8 V with a relatively high dielectric breakdown strength (>3 MV/cm) and a low leakage current (10-100 nA/mm 2 at 2 MV/ cm). The yield of thin gate dielectrics in top-gate polymer FETs is correlated with the roughness of underlying semiconducting polymer film. High mobilities of 0.1-0.2 cm 2 / V s and on and off state current ratios of 10 4 were achieved with the high performance semiconducting polymer, poly (2,5-bis(3-alkylthiophen-2yl)thieno[3,2-b]thiophene.