New dielectrics open gate for n-type organic field-effect transistors: Polymers
β Scribed by Mark Telford
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 116 KB
- Volume
- 8
- Category
- Article
- ISSN
- 1369-7021
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We have demonstrated top-gate polymer field-effect transistors (FETs) with ultra-thin (30-50 nm), room-temperature crosslinkable polymer gate dielectrics based on blending an insulating base polymer such as poly(methyl methacrylate) with an organosilane crosslinking agent, 1,6-bis(trichlorosilyl)hex
We report on the fabrication and characterization of parylene C thin layers for organic electronic devices passivation and gate dielectric of organic field effect transistors (OFETs) development. The investigated thin parylene layers were deposited from the vapour phase in thickness ranging from 3 t