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Reactive ion etching of zinc oxide (ZnO) in SiCl4 based plasmas

✍ Scribed by Mastropaolo, E.; Gundlach, A.M.; Fragkiadakis, C.; Kirby, P.B.; Cheung, R.

Book ID
115507779
Publisher
The Institution of Electrical Engineers
Year
2007
Tongue
English
Weight
81 KB
Volume
43
Category
Article
ISSN
0013-5194

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Reactive ion etching of GaInP/GaAs multi
Reactive ion etching of GaInP/GaAs multilayer structures with SiCl4ξ—ΈCl2ξ—ΈAr plasma
✍ B. Saint-Cricq; A. Sadeghi; A. Rudra; M. Ilegems πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 634 KB

The reactive ion etching of the GalnP/GaAs multilayer structure using SIC14, CI 2 and Ar was examined. Different plasma compositions were tested and a mixture containing principally SiC14 was chosen. Experiments were performed with power densities between 0.01 and 0.78 W cm -2 and at pressures betwe