Reactive ion etching of GaInP/GaAs multilayer structures with SiCl4Cl2Ar plasma

✍ Scribed by B. Saint-Cricq; A. Sadeghi; A. Rudra; M. Ilegems

• Book ID: 103954660
• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 634 KB
• Volume: 28
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(94)90084-1

✦ Synopsis

The reactive ion etching of the GalnP/GaAs multilayer structure using SIC14, CI 2 and Ar was examined. Different plasma compositions were tested and a mixture containing principally SiC14 was chosen. Experiments were performed with power densities between 0.01 and 0.78 W cm -2 and at pressures between 2 and 50 mTorr. Etching mechanisms and the surface morphology are discussed briefly and compared with results for substrate materials processed under the same plasma conditions. Orientation independent etching of 5/~m high posts with no selectivity between GalnP and GaAs is reported. The sidewalls are smooth and contamination free.