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Optimization of GaAs ECR etching in chemically assisted ion beam process using Cl2/Ar plasma

✍ Scribed by S.F Yoon; T.K Ng; H.Q Zheng


Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
628 KB
Volume
3
Category
Article
ISSN
1369-8001

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Chemically-assisted ion-beam etching of
✍ J Daleiden; R Kiefer; S Klußmann; M Kunzer; C Manz; M Wailher; J Braunstein; G W πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 461 KB

We evaluated the lattice damage in Al Ga As / GaAs Single Quantum Well (SQW) structures caused by Chemically-0.4 0.6 Assisted Ion-Beam Etching (CAIBE) in comparison with Ion-Beam Etching (IBE) and wet etching. The damage was analyzed by measuring the Photoluminescence (PL) of the SQWs as a function