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Low bias reactive ion etching of GaAs with a SiCl[sub 4]∕N[sub 2]∕O[sub 2] time-multiplexed process

✍ Scribed by Golka, S. ;Schartner, S. ;Schrenk, W. ;Strasser, G.

Book ID: 121737801
Publisher: AVS (American Vacuum Society)
Year: 2007
Tongue: English
Weight: 705 KB
Volume: 25
Category: Article
ISSN: 0734-211X
DOI: 10.1116/1.2737439

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