[IEEE Conference on Electron Devices, 2005 Spanish - Tarragona, Spain (2-4 Feb. 2005)] Conference on Electron Devices, 2005 Spanish - A study of the influence of N/sub 2/O and N/sub 2/ annealing processes on 4H-SiC MOS structures with deposited TEOS SiO/sub 2/ as gate oxide

✍ Scribed by Perez-Tomas, A.; Godignon, P.; Mestres, N.; Tournier, D.; Millan, J.

• Book ID: 126626770
• Publisher: IEEE
• Year: 2005
• Weight: 523 KB
• Category: Article
• ISBN-13: 9780780388109
• DOI: 10.1109/SCED.2005.1504313