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[IEEE Conference on Electron Devices, 2005 Spanish - Tarragona, Spain (2-4 Feb. 2005)] Conference on Electron Devices, 2005 Spanish - Influence of RF power on c-Si surface passivation by amorphous a-SiC/sub x/:H layers deposited by PECVD

✍ Scribed by Ferre, R.; Martin, I.; Vetter, M.; Orpella, A.; Alcubilla, R.

No coin nor oath required. For personal study only.

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