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Reactive ion etching of SiC using C2F6/O2inductively coupled plasma

✍ Scribed by S. -M. Kong; H. -J. Choi; B. -T. Lee; S. -Y. Han; J. L. Lee

Book ID
107452856
Publisher
Springer US
Year
2002
Tongue
English
Weight
149 KB
Volume
31
Category
Article
ISSN
0361-5235

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u Γ€ 2u scan for the as-deposited FePt film. The diffraction peaks associated with the formation of L1 0 ordered structure were clearly observed . Furthermore, the magnetic property of the film was investigated employing a superconducting quantum interference device (SQUID) magnetometer with the magn