This paper reviews recent progress in structural and electronic characterizations of ultrathin SiO 2 thermally grown on Si(100) surfaces and applications of such nanometer-thick gate oxides to advanced MOSFETs and quantum-dot MOS memory devices. Based on an accurate energy band profile determined fo
Quasi-breakdown in ultrathin gate dielectrics
✍ Scribed by A. Halimaoui; O. Brière; G. Ghibaudo
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 323 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0167-9317
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