ChemInform Abstract: High Quality Ultrathin CoTiO3 High-k Gate Dielectrics.
β Scribed by Tung Ming Pan; Tan Fu Lei; Tien Sheng Chao; Kuo Lih Chang; Kuang Chien Hsieh
- Publisher
- John Wiley and Sons
- Year
- 2000
- Weight
- 31 KB
- Volume
- 31
- Category
- Article
- ISSN
- 0931-7597
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π SIMILAR VOLUMES
Charge trapping in ultrathin high-k Gd 2 O 3 dielectric leading to appearance of hysteresis in C-V curves is studied by capacitance-voltage and current-voltage techniques. It was shown that the large leakage current at a negative gate voltage causes the generation of the positive charge in the diele
Schottky barrier SOI-MOSFETs incorporating a La(2)O(3)/ZrO(2) high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N'-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameter